PTVA102001EA V1 R0 Description

ThePTVA102001EA V1 R0 is a 200-watt LDMOS FET intended for use

in power amplifier applications in the 960 to 1600 MHz frequency

band. Features include high gain and thermally-enhanced package

with bolt-down flange. Manufactured with Wolfspeed's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability

PTVA102001EA V1 R0

Package H-36265-2

Features

• Input matched

• Capable of handling 10:1 VSWR @50 V, 200 W

(CW) output power

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

PTVA102001EA V1 R0規(guī)格

制造商: Cree, Inc.

產(chǎn)品種類: 射頻金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)(RF MOSFET)晶體管

RoHS:  詳細(xì)信息  

晶體管極性: N-Channel

技術(shù): Si

Vds-漏源極擊穿電壓: 105 V

Rds On-漏源導(dǎo)通電阻: 340 mOhms

增益: 18.5 dB

輸出功率: 200 W

最大工作溫度: + 225 C

安裝風(fēng)格: SMD/SMT

封裝 / 箱體: H-36265-2

封裝: Cut Tape

封裝: MouseReel

封裝: Reel

工作頻率: 960 MHz to 1600 MHz  

類型: RF Power MOSFET  

商標(biāo): Wolfspeed / Cree  

通道數(shù)量: 1 Channel  

產(chǎn)品類型: RF MOSFET Transistors  

工廠包裝數(shù)量: 50  

子類別: MOSFETs  

Vgs - 柵極-源極電壓: 10 V