型號	MJE172G	品牌	ON
批號	20+	封裝	TO-255
QQ	370533363

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MJE172G (PNP),  (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features ? High DC Current Gain ? High Current?Gain ? Bandwidth Product ? Annular Construction for Low Leakages ? Epoxy Meets UL 94 V?0 @ 0.125 in ? These Devices are Pb?Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector?Base Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G VCB 60 80 100 Vdc Collector?Emitter Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G VCEO 40 60 80 Vdc Emitter?Base Voltage VEB 7.0 Vdc Collector Current ? Continuous IC 3.0 Adc Collector Current ? Peak ICM 6.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 12.5 0.012 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 1.5 0.1 W W/C Operating and Storage Junction Temperature Range TJ, Tstg ?65 to +150 C ESD ? Human Body Model HBM 3B V ESD ? Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 ? 60 ? 80 VOLTS 12.5 WATTS http://onsemi.com MARKING DIAGRAM Y = Year WW = Work Week JE1xx = Specific Device Code x = 70, 71, 72, 80, 81, or 82 G = Pb?Free Package See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 3 BASE 1 EMITTER COLLECTOR 2, 4 3