型號(hào)	BAV70WT1G	品牌	ON
批號(hào)	20+	封裝	SOT323
QQ	370533363

   BAV70W, SBAV70W Dual Switching Diode Common Cathode Features ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant*

MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM 2.0 A Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 0.7 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board (Note 1) TA = 25°C Derate above 25°C PD 200 1.6 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 625 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 417 °C/W Junction and Storage Temperature TJ, Tstg ?55 to +150 °C 1. FR?5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

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