深圳黃金樹科技有限公司代理國內(nèi)MOSFET，IC 集成電路，橋堆 二三極管 可控硅等電子產(chǎn)品， 產(chǎn)品主要應(yīng)用于UPS、EPS、逆變電源、工業(yè)控制板、變頻電源、開關(guān)電源、電力操作電源、小家電，新能源，汽車電子等高科技行業(yè)，并致力于推廣供應(yīng)環(huán)保無鉛的綠色產(chǎn)品。 我們本著“誠信經(jīng)營，互惠互贏”的理念貫穿供應(yīng)，銷售，服務(wù)的始終。我們始終將“創(chuàng)新，進(jìn)取，誠信合作，品質(zhì)，客戶，服務(wù)至上”作為商務(wù)合作發(fā)展的基石，愿我們持續(xù)，共同發(fā)展！深圳黃金樹科技有限公司是知名的電子元器件混合分銷商，成立于深圳龍華區(qū)，主要產(chǎn)品有SPM、IG、MOSFET、FRD(快恢復(fù)）、可控硅、光耦、IC、MCU等。代理品牌有：無錫新潔能（NCE)，江蘇捷捷微（JJM),福斯特（FIRST),臺灣博盛（POTENS)，優(yōu)勢現(xiàn)貨品牌有UTC友順，安森美(ON)，英飛凌(Infineon) ,NXP,ADI,RICHTEK,TI等。
本公司是美國福斯特品牌一級代理商，公司長期備有FS全線產(chǎn)品庫存，原廠原裝現(xiàn)貨庫存，假一賠萬，F(xiàn)IR8N80FG優(yōu)勢出貨，聯(lián)系電話：13510537787何
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? High voltage: BVDSS=800V ? Low gate charge: Qg=40nC (Typ.) ? Low drain-source On resistance: RDS(on)=1.8 ? (Max.) ? alanche tested ? RoHS compliant device and ailable in halogen Absolute maximum ratings (TC=25?C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 800 V Gate-source voltage VGSS ?30 V Drain current (DC) * ID Tc=25?C 7 A Tc=100?C 5.1 A Drain current (Pulsed) * IDM 28 A Single pulsed alanche energy (Note 2) EAS 300 mJ Power dissipation PD 60 W Junction temperature TJ 150 ?C Storage temperature range Tstg -55~150 ?C Features free device
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FIR8N80FGThermal Characteristics Characteristic Symbol Rating Unit Thermal resistance, junction to case Rth(j-c) Max. 2.08 ?C/W Thermal resistance, junction to ambient Rth(j-a) Max. 120 Electrical Characteristics (TC=25?C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 800 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2 - 4 V Drain-source cut-off current IDSS VDS=800V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=?30V - - ?100 nA Drain-source on-resistance RDS(ON) VGS=10V, ID ? Forward transfer conductance (Note 3) gfs VDS=10V, ID=3.5A - 5.0 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz Output capacitance Coss - 110 - pF Reverse transfer capacitance Crss - 11 - Turn-on delay time (Note 3,4) td(on) VDD=400V, ID=7A, RG=25? - 30 - ns Rise time (Note 3,4) tr - 67 - Turn-off delay time (Note 3,4) td(off) - 58 - Fall time (Note 3,4) tf - 38 - Total gate charge (Note 3,4) Qg VDS=640V, VGS=10V, ID=7A - 26 - Gate-source charge nC (Note 3,4) Qgs - 7.0 - Gate-drain charge (Note 3,4) Qgd - 8.0 - Source-Drain Diode Ratings and Characteristics (TC=25?C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS Integral reverse diode in the MOSFET - - 8 A Source current (Pulsed) ISM - - 32 A Forward voltage VSD VGS=0V, IS=7A - - 1.4 V Reverse recovery time (Note 3,4) trr IS=7A, VGS=0V dIF/dt=100A/us - 310 - ns Reverse recovery charge (Note 3,4) Qrr - 0.53 - uC