生產廠商：Graphene Supermarket

產品信息

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO₂/Si substrates (p-doped),  1cmx1cm: 4 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-¹

The h-BN film is grown via CVD onto copper foil, then transferred to the SiO₂/Si substrate

Applications:

BN on SiO2/Si wafers are ideal for creating graphene/BN interfaces, allowing the graphene to be precisely gated, increasing mobility, and reducing scattering. h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjunction with graphene, we encourage you to explore graphene heterostructures for transistor applications.

The Raman spectrum of hBN monolayer