MT41K256M8DA-125:K  MT41K256M8DA-125:K   MT41K256M8DA-125:K   MT41K256M8DA-125:K

存儲(chǔ)器類型 易失

存儲(chǔ)器格式 DRAM

技術(shù) SDRAM - DDR3L

存儲(chǔ)容量 2Gb （256M x 8）

存儲(chǔ)器接口 并聯(lián)

時(shí)鐘頻率 800MHz

寫周期時(shí)間 - 字，頁(yè) -

訪問時(shí)間 13.75ns

電壓 - 電源 1.283V ~ 1.45V

工作溫度 0°C ~ 95°C（TC）

安裝類型 表面貼裝型

封裝/外殼 78-TFBGA

Description

The 1.35V DDR3L SDRAM device is a low-voltage ver-

sion of the 1.5V DDR3 SDRAM device. Refer to the

DDR3 (1.5V) SDRAM data sheet specifications when

running in 1.5V compatible mode.

Features

• V DD = V DDQ = 1.35V (1.283–1.45V)

• Backward-compatible to V DD = V DDQ = 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T C  of 95°C