本公司營(yíng)ADI亞德諾、ST意法半導(dǎo)體、TI德州儀器、IR國(guó)際整流器、Altera阿爾特拉、Xilinx賽靈思等品牌的IC芯片、二三極管、繼電器、模塊等電子元器件。 制造商：Infineon 產(chǎn)品種類：MOSFET RoHS：詳細(xì)信息 技術(shù)：Si 安裝風(fēng)格：通孔 封裝/箱體：TO-220-3 晶體管極性：N溝道 MOSFET通道數(shù)量：1個(gè)頻道 Vds-漏源極擊穿電壓：100 V Id-連續(xù)直流電流：97 A Rds漏源導(dǎo)通電阻：7.2毫歐 Vgs-克羅地亞-源極電壓：20 V Qg-萘甲酸：83 nC Pd-功率耗散：230 W 封裝：Tube 配置：?jiǎn)?高度：15.65毫米 長(zhǎng)度：10毫米 晶體管類型：1 N溝道 寬度：4.4毫米 商標(biāo)：Infineon Technologies 產(chǎn)品類型：MOSFET 工廠包裝數(shù)量：1000 子類別：MOSFET 零件號(hào)別名：IRFB4410ZPBF SP001564008 單位重量：6 g 應(yīng)用領(lǐng)域 •SMPS中的高效同步整流 •不間斷電源供應(yīng) •高速電源開關(guān) •硬開關(guān)和高頻電路 好處 •改進(jìn)的門，雪崩和動(dòng)態(tài)dV / dt堅(jiān)固性 •完全表征的電容和雪崩SOA •增強(qiáng)體二極管dV / dt和dI / dt能力 •無(wú)鉛 •符合RoHS，無(wú)鹵素 最大絕對(duì)額定值 Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 97 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 69 IDM Pulsed Drain Current CD 390 PD @TC = 25°C Maximum Power Dissipation 230 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery G) 16 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lb" in (1.1N" m) 熱阻 Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 97 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 69 IDM Pulsed Drain Current CD 390 PD @TC = 25°C Maximum Power Dissipation 230 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery G) 16 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lb" in (1.1N" m)